MMBTSC2411

MMBTSC2411 NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups P, Q and R according to its DC current gain. www.DataSheet4U.com Absolute Maximum Ratings (T a = 25 OC) Symbol VCBO VCEO VEBO IC Ptot Tj TS SOT-23 Plastic Package V al ue 40 32 5 500 200 150 -55 to +150 Unit V V V mA mW O Parameter C o ll e ct o r B as e V o lt a g e Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at T a =25 O C C O C Symbol P Q R hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) fT Cob Min. 82 120 180 40 32 5 Typ. 250 6 Max. 180 270 390 1 1 0.4 Unit V V V µA µA V MHz pF Parameter DC Current Gain at VCE = 3 V, IC = 100 mA Collector Base Breakdown Voltage at IC= 100 µA Collector Emitter Breakdown Voltage at IC= 1 mA Emitter Base Breakdown Voltage at IE= 100 µA Collector Cutoff Current at VCB= 20 V Emitter Cutoff Current at VEB = 4 V Collector Saturation Voltage at IC = 500 mA, IB = 50 mA Transition frequency at VCE = 5 V, -IE = 20 mA, f = 100 MHz Output Capacitance at VCB = 10 V, IE = 0 A, f = 1 MHz РАДИОТЕХ-ТРЕЙД ® Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: [email protected] Веб: www.rct.ru MMBTSC2411 www.DataSheet4U.com SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 21/12/2005 ...