MMBTSC2412
NPN Silicon Epitaxial Planar Transistor
for general purpose applications. The transistor is subdivided into t...
MMBTSC2412
NPN Silicon Epitaxial Planar
Transistor
for general purpose applications. The
transistor is subdivided into three groups Q, R and S. according to its DC current gain.
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SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC Ptot Tj TS
Value 60 50 7 150 200 150 -55 to +150
Unit V V V mA mW
O
C C
O
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
MMBTSC2412
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1mA Q R S hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) fT COB Min. 120 180 270 60 50 7 Typ. 180 2
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Max. 270 390 560 0.1 0.1 0.4 3.5
Unit V V V µA µA V MHz pF
Collector Base Breakdown Voltage at IC=50µA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=50µA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=7V Collector Saturation Voltage at IC=50mA, IB=5mA Gain Bandwidth Product at VCE=12V, -IE=2mA, f=100MHz Output Capacitance at VCE=12V, f=1MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
MMBTSC2412
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