MMBTSC2714

MMBTSC2714 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier at FM,RF,MIX, and IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. www.DataSheet4U.com SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS Value 40 30 4 20 4 200 125 -55 to +125 Unit V V V mA mA mW O C C O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTSC2714 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1mA Current Gain Group R O Y Collector Cutoff Current at VCB=18V Emitter Cutoff Current at VEB=4V Transition Frequency at VCE=6V, IC=1mA Reverse Transfer Capacitance at VCB=6V, f=1MHz Collector-Base Time Constant Noise Figure at VCE=6V, IE=-1mA, f=100MHz Power Gain at VCE=6V, IE=-1mA, f=100MHz Gpe 17 23 NF 2.5 Cre Cc.rbb’ 0.7 fT 550 IEBO ICBO hFE hFE hFE 40 70 100 Min. Typ. www.DataSheet4U.com Max. Unit 80 140 200 0.5 0.5 30 5 - µA µA MHz pF ps dB dB SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTSC2714 www.DataSheet4U.com SEMTEC...