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STYN225S Dataheets PDF



Part Number STYN225S
Manufacturers Sirectifier Semiconductors
Logo Sirectifier Semiconductors
Description (STYN225 - STYN10250 Discrete Thyristors
Datasheet STYN225S DatasheetSTYN225S Datasheet (PDF)

STYN225(S) thru STYN1025(S) Discrete Thyristors(SCRs) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 www.DataSheet4U.com G A K A G K Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.8.

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STYN225(S) thru STYN1025(S) Discrete Thyristors(SCRs) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 www.DataSheet4U.com G A K A G K Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 Dimensions TO-263(D2PAK) A A Dim. A A1 b b2 c c2 D D1 E E1 e G K 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.88 2.79 1.40 1.78 0.20 0.74 .380 .405 .245 .320 .100 BSC .575 .090 .040 .050 0 .018 .625 .110 .055 .070 .008 .029 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side L L1 L2 L3 L4 R ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current I²t V alue for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr £ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage (for TN8 & TYN only) tp = 8.3 ms tp = 10 ms tp = 10 ms F = 60 Hz tp = 20 µs Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C Tc = 100°C Tc = 100°C Value 25 16 314 300 450 50 4 1 - 40 to + 150 - 40 to + 125 5 A2S A/µs A W °C V Unit A A A I ²t dI/dt IGM PG(AV) Tstg Tj VRGM STYN225(S) thru STYN1025(S) Discrete Thyristors(SCRs) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) s www.DataSheet4U.com STANDARD Symbol IGT VD = 12 V VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM ITM = 16 A Gate open Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C RL = 3.3 kW Gate open Tj = 125°C RL = 33 W Test Conditions MIN. MAX. MAX. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. TYNx08(S) 4 40 1.3 0.2 50 90 1000 1.6 0.77 14 5 4 V V mA mA V/µs V V mW µA mA Unit mA tp = 380 µs Threshold voltage Dynamic resistance VDRM = VRRM THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-a) J unction to case (DC) Junction to ambient (DC) S = 1.0 cm ² S= copper surface under tab Parameter Value 1.0 TO-220AB TO-263 60 45 Unit °C/W °C/W PRODUCT SELECTOR Voltage (xxx) Part Number Sensitivity Package STYN x25S S T Y N x25 200~~1000 200~~1000 40 mA 40 mA TO-263 TO-220AB OTHER INFORMATION Part Number STYN x25S S T Y N x25 Note: x = voltage Marking STYN x25S S T Y N x25 Weight 0.5 g 2.3 g Base Quantity 50 250 Packing mode Tube B ulk .


STYN1025S STYN225S STYN1030


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