Document
SDRAM 64Mb H-die (x4, x8, x16)
CMOS SDRAM
64Mb H-die SDRAM Specification
54 TSOP-II with Pb-Free (RoHS compliant)
Revision 1.3 August 2004
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.3 August 2004
SDRAM 64Mb H-die (x4, x8, x16)
Revision History Revision 1.0 (September, 2003)
• Finalized
CMOS SDRAM
Revision 1.1 (October, 2003)
Deleted speed -7C and AC parameter notes 5.
Revision 1.2 (May, 2004)
• Added Note 5. sentense of tRDL parameter
Revision 1.3 (August, 2004)
• Corrected typo.
Rev. 1.3 August 2004
SDRAM 64Mb H-die (x4, x8, x16)
CMOS SDRAM
4M x 4Bit x 4 / 2M x 8Bit x 4 / 1M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock • Burst read single-bit write operation • DQM (x4,x8) & L(U)DQM (x16) for masking • Auto & self refresh • 64ms refresh period (4K cycle)
• Pb-free Package
• RoHS compliant
GENERAL DESCRIPTION
The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Ordering Information
Part No. K4S640432H-UC(L)75 K4S640832H-UC(L)75 K4S641632H-UC(L)60 K4S641632H-UC(L)70 K4S641632H-UC(L)75 4Mb x 16 Orgainization 16Mb x 4 8Mb x 8 Max Freq. 133MHz(CL=3) 133MHz(CL=3) 166MHz(CL=3) 143MHz(CL=3) 133MHz(CL=3) LVTTL 54pin TSOP(II) Interface Package
Organization 16Mx4 8Mx8 4Mx16
Row Address A0~A11 A0~A11 A0~A11
Column Address A0-A9 A0-A8 A0-A7
Row & Column address configuration
Rev. 1.3 August 2004
SDRAM 64Mb H-die (x4, x8, x16)
Package Physical Dimension
CMOS SDRAM
0~8°C 0.25 TYP 0.010 #54 #28 0.45~0.75 0.018~0.030 0.05 MIN 0.002 ( 0.50 ) 0.020
11.76±0.20 0.463±0.008
#1 22.62 MAX 0.891 22.22 0.875 0.10 MAX 0.004 ( 0.71 ) 0.028
± 0.10 ± 0.004
#27
0.21 0.008
± 0.05 ± 0.002
1.00 0.039
± 0.10 ± 0.004
0.30 -0.05 0.004 0.012 + -0.002
+0.10
0.80 0.0315
54Pin TSOP(II) Package Dimension
10.16 0.400 0.125+0.075 -0.035 0.005+0.003 -0.001 1.20 MAX 0.047
Rev. 1.3 August 2004
SDRAM 64Mb H-die (x4, x8, x16)
FUNCTIONAL BLOCK DIAGRAM
CMOS SDRAM
I/O Control
LWE LDQM
Data Input Register Bank Select 4M x 4 / 2M x 8 / 1M x 16 Sense AMP 4M x 4 / 2M x 8 / 1M x 16 4M x 4 / 2M x 8 / 1M x 16 4M x 4 / 2M x 8 / 1M x 16 Refresh Counter
Output Buffer
Row Decoder
Row Buffer
DQi
Address Register
CLK ADD
Column Decoder Col. Buffer Latency & Burst Length
LRAS
LCBR
LCKE LRAS LCBR LWE LCAS Timing Register
Programming Register LWCBR LDQM
CLK
CKE
CS
RAS
CAS
WE
L(U)DQM
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.3 August 2004
SDRAM 64Mb H-die (x4, x8, x16)
PIN CONFIGURATION (Top view) x8 x4 x16
VDD VDD VDD DQ0 DQ0 N.C VDDQ VDDQ VDDQ DQ1 N.C N.C DQ2 DQ1 DQ0 VSSQ VSSQ VSSQ DQ3 N.C N.C DQ4 DQ2 N.C VDDQ VDDQ VDDQ DQ5 N.C N.C DQ6 DQ3 DQ1 VSSQ VSSQ VSSQ DQ7 N.C N.C VDD VDD VDD LDQM N.C N.C WE WE WE CAS CAS CAS RAS RAS RAS CS CS CS BA0 BA0 BA0 BA1 BA1 BA1 A10/AP A10/AP A10/AP A0 A0 A0 A1 A1 A1 A2 A2 A2 A3 A3 A3 VDD VDD VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28
CMOS SDRAM
x4
VSS N.C VSSQ N.C DQ3 VDDQ N.C N.C VSSQ N.C DQ2 VDDQ N.C VSS N.C/RFU DQM CLK CKE N.C A11 A9 A8 A7 A6 A5 A4 VSS
x8
VSS DQ7 VSSQ N.C DQ6 VDDQ N.C DQ5 VSSQ N.C DQ4 VDDQ N.C VSS N.C/RFU DQM CLK CKE N.C A11 A9 A8 A7 A6 A5 A4 VSS
x16
VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 VSS N.C/RFU UDQM CLK CKE N.C A11 A9 A8 A7 A6 A5 A4 VSS
54Pin TSOP (II) (400mil x 875mil) (0.8 mm Pin pitch)
PIN FUNCTION DESCRIPTION
Pin CLK CS Name System clock Chip select Input Function Active on the positive going edge to sample all inputs. Disables or enables device operation by masking or enabling all inputs except CLK, CKE and DQM Masks system clock to freeze operation from the next clock cycle. CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. Row/column addresses are multiplexed on the same pins. Row address : RA0 ~ RA11, Column address : (x4 : CA0 ~ CA9, x8 : CA0 ~ CA8 , x16 : CA0 ~ CA7) Selects bank to be activated during row address latch time. Selects bank for read/write during column address latch time. La.