TSA884

PNP Silicon Planar High Voltage Transistor SOT-23 Pin Definition: 1. Emitter 2. Base 3. Collector www.DataSheet4U.com TSA884 PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) -500V -500V -150mA -0.5V @ IC / IB = -50mA / -10mA Features ● ● Low Saturation Voltages Excellent gain characteristics specified up to -50mA Ordering Information Part No. TSA884CX RF Package SOT-23 Packing 3Kpcs / 7” Reel Structure ● ● Epitaxial Planar Type PNP Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Symbol VCBO VCEO VEBO IC Ptot TJ TSTG Limit -500 -500 -5 -150 -500 0.3 +150 - 55 to +150 Unit V V V mA W C o C o Total Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter on Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Turn On Time Turn Off Time Conditions IC = -100uA, IE = 0 IC = -10mA, IB = 0 IE = -100uA, IC = 0 VCB = 120V, IE = 0 VEB = 6V, IC = 0 IC = -20mA, IB = -2mA IC = -50mA, IB = -10mA IC = -50mA, IB = -10mA VCE = -10V, IC = -50mA VCE = -10V, IC = -1mA VCE = -10V, IC = -50mA VCE = -10...