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TSC136

Taiwan Semiconductor Company

High Voltage NPN Transistor

High Voltage NPN Transistor www.DataSheet4U.com TSC136 TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUC...


Taiwan Semiconductor Company

TSC136

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High Voltage NPN Transistor www.DataSheet4U.com TSC136 TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 700V 3A 2V @ IC / IB = 2A / 0.5A Features ● ● High Voltage High Speed Switching Block Diagram Structure ● ● Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. TSC136CZ C0 Package TO-220 Packing 50pcs / Tube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Total Dissipation @ Tc ≤ 25 C Collector Peak Current (tp <5ms) Collector Current Base Peak Current (tp <5ms) Base Current Maximum Operating Junction Temperature Storage Temperature Range o Symbol VCBO VCEO VEBO Ptot ICM IC IBM IB TJ TSTG Limit 700 400 9 60 6 3 3 1.5 +150 -65 to +150 Unit V V V W A A A A o o C C Thermal Performance Parameter Junction to Case Thermal Resistance Symbol RӨJC Limit 2.08 Unit o C/W 1/5 Version: C07 High Voltage NPN Transistor Electrical Specifications Parameter Static Collector-Base Voltage a Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage a www.DataSheet4U.com TSC136 Conditions IC = 10mA, IB = 0 IC = 10mA, IE = 0 IE = 1mA, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 IC =0.5A, IB =0.1A IC =0.6A, IB =60mA IC =2A, IB =0.5A VCE = 5V, IC = 10mA VCE = 5V, IC = 1A VCE = 5V, IC = 2A VCE = 10V, IC = 0.1A VCB...




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