TSC5327

Engineer Specification TSC5327 www.DataSheet4U.com High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 800V 1200V 4A 3V @ IC / IB = 2.5A / 0.5A Features ● ● High Voltage High Speed Switching Block Diagram Structure ● ● Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. TSC5327CZ C0 Package TO-220 Packing 50pcs / Tube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single Pulse. PW = 300uS, Duty ≤2% DC Pulse DC Pulse Symbol VCBO VCEO VEBO IC IB PD TJ TSTG Limit 1200V 800V 7 4 10 2 5 50 +150 - 55 to +150 Unit V V V A A W o o C C 1/4 Version: Engineer Specification A Engineer Specification TSC5327 www.DataSheet4U.com High Voltage NPN Transistor Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Dynamic Frequency Output Capacitance Rise Time Storage Time Fall Time VCE =10V, IC =0.2A VCB =10V, f =1MHz VCC =250V, IC =1.5A, IB1=0.3, -...