TSC5988

NPN Silicon Planar Medium Power Transistor TO-92 Pin Definition: 1. Emitter 2. Base 3. Collector www.DataSheet4U.com TSC5988 PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) 150V 60V 6A 0.55V @ IC / IB = 6A / 300mA Features ● Excellent gain characteristics specified up to 10A Ordering Information Part No. TSC5988CT B0 TSC5988CT A3 Structure ● Epitaxial Planar Type Package TO-92 TO-92 Packing 1Kpcs / Bulk 2Kpcs / Ammo Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Symbol VCBO VCEO VEBO IC Ptot TJ TSTG Limit 150 60 6 5 20 1.0 +150 - 55 to +150 Unit V V V A W C o C o Total Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Conditions IC =100uA, IE =0 IC =10mA, IB =0 IE =100uA, IC =0 VCB =120V, IE =0 VCB =120V, TA =100ºC VEB =6V, IC =0 IC =100mA, IB =5mA IC =1A, IB =50mA IC =2A, IB =100mA IC =5A, IB =200mA IC =4A, IB =200mA VCE =1V, IC =6A VCE =1V, IC =10mA VCE =1V, IC =2A VCE =1V, IC =5A VCE =1V, IC =10A VCE =10V, IC=100mA VCB =10V, f=1MHz 1/5 Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) 1 VCE(SAT) 2 VCE(SAT) 3 VCE(SAT) 4 VBE(SAT) VBE(ON) hFE 1 hFE 2 hFE 3 hFE 4 fT Cob Min 150 60 6 ---------100...