TSD1760

Low Vcesat NPN Transistor TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter www.DataSheet4U.com TSD1760 PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) 50V 50V 3A 0.5V @ IC / IB = 2A / 200mA Features ● ● Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB1184CP Ordering Information Part No. TSD1760CP RO Package TO-252 Packing 2.5Kpcs / 13” Reel Structure ● ● Epitaxial Planar Type NPN Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation DC Pulse Ta=25ºC Tc=25ºC Symbol VCBO VCEO VEBO IC PD Limit 50 50 5 3 7 (note 1) 1 (note 2) 15 +150 - 55 to +150 Unit V V V A W o o Operating Junction Temperature TJ Operating Junction and Storage Temperature Range TSTG Note: 1. Single pulse, Pw=10mS, Duty≤2% 2. PCB 1.7mm thick, collector copper plating 10mm x 10mm or larger. C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Conditions IC = 50uA, IE = 0 IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCB = 30V, IE = 0 VEB = 4V, IC = 0 IC / IB = 2A / 200mA VCE = 2V, IC = 100mA Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *hFE fT Cob Min 50 50 5 ---82 --- Typ -----0.25 -90 ...