TSD2098A

TSD2098A Low Vcesat NPN Transistor SOT-89 Pin Definition: 1. Base 2. Collector 3. Emitter www.DataSheet4U.com PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) 100V 20V 5A 0.35V @ IC / IB = 3A / 100mA Features ● ● Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics Ordering Information Part No. TSD2098ACY RM Package SOT-89 Packing 1Kpcs / 7” Reel Structure ● ● Epitaxial Planar Type NPN Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation DC Pulse Symbol VCBO VCES VCEO VEBO IC PD Limit 100 95 20 6 5 8 (note1) 0.6 1 (note 2) 2 (note 3) +150 - 55 to +150 Unit V V V V A W o o Operating Junction Temperature TJ Operating Junction and Storage Temperature Range TSTG Note: 1. Single pulse, Pw = 10mS 2. Printed circuit board, glass epoxy board, 1.7mm thick with collector copper plating 10mm x 10mm. 3. When mounted on a 40 x 40 x 0.7mm ceramic board C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Conditions Symbol BVCBO BVCES BVCEO BVEBO ICBO IEBO VCE(SAT) VCE(SAT) hFE hFE hFE fT Cob Min 100 95 20 6 ----230 260 150 --- Typ ----0.35 -0.35 ----150 30 Max ----0.5...