TSD2444

Low Vcesat NPN Transistor SOT-23 Pin Definition: 1. Base 2. Emitter 3. Collector www.DataSheet4U.com TSD2444 PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) 40V 25V 800mA 40mV @ IC / IB = 50 / 2.5mA Features ● ● Low VCE(SAT) Excellent DC Current Gain Characteristics Ordering Information Part No. TSD2444CX RF Package SOT-23 Packing 3Kpcs / 7” Reel Structure ● ● Epitaxial Planar Type Complementary to TSB1590CX Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot TJ TSTG Limit 40 25 6 800 225 +150 - 55 to +150 Unit V V V mA mW o C o C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter on Voltage DC Current Transfer Ratio Conditions IC = 100uA, IE = 0 IC = 2mA, IB = 0 IE = 100uA, IC = 0 VCB = 30V, IE = 0 VEB = 6V, IC = 0 IC = 50mA, IB = 2.5mA IC = 400mA, IB = 20mA IC = 800mA, IB = 80mA VCE = 1V, IC = 10mA VCE = 1V, IC = 100mA VCE = 1V, IC = 600mA Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) 1 *VCE(SAT) 2 *VCE(SAT) 3 VBE(ON) hFE 1 hFE 2 fT Cob Min 40 25 6 -----180 40 --- Typ -----0.04 0.15 0.25 ---150 15 Max ---0.5 0.5 0.06...