TSM1412

Preliminary 20V N-Channel MOSFET SOT-363 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source www.DataSheet4U.com TSM1412 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 34 @ VGS = 4.5V 20 38 @ VGS = 2.5V 44 @ VGS = 2.0V ID (A) 3 3 3 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Notebook PC Application Portable Equipment Applications Ordering Information Part No. TSM1412CU6 RF Package SOT-363 Packing 3Kpcs / 7” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit 20 ±8 5 15 1.0 1.6 0.8 +150 -55 to +150 Unit V V A A A W o o C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. Symbol RӨJF RӨJA Limit 45 80 Unit o o C/W C/W 1/4 Version: Preliminary Preliminary 20V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Dr...