20V N-Channel MOSFET
20V N-Channel MOSFET
SOT-23
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TSM2310
Pin Definition: 1. Gate 2. Source 3. Drain
PRODUCT SUMMARY V...
Description
20V N-Channel MOSFET
SOT-23
www.DataSheet4U.com
TSM2310
Pin Definition: 1. Gate 2. Source 3. Drain
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
33 @ VGS = 4.5V 20 40 @ VGS = 2.5V 100 @ VGS = 1.8V
ID (A)
4 3.2 2.0
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● ● Load Switch PA Switch
Ordering Information
Part No.
TSM2310CX RF
Package
SOT-23
Packing
3Kpcs / 7” Reel N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b o o
Symbol
VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C
Limit
20 ±12 4 15 1.0 1.25 0.8 +150 -55 to +150
Unit
V V A A A W
o o
C C
Thermal Performance
Parameter
Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec.
Symbol
RӨJF RӨJA
Limit
75 160
Unit
o o
C/W C/W
1/6
Version: B09
20V N-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance...
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