Document
40V N-Channel MOSFET
SOT-23
Pin Definition: 1. Gate 2. Source 3. Drain
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TSM2318
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
40 45 @ VGS = 10V 62.5 @ VGS = 4.5V
ID (A)
3.9 3.5
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● ● Load Switch Stepper Motors
Ordering Information
Part No.
TSM2318CX RF TSM2318CX RFG
Package
SOT-23 SOT-23
Packing
3Kpcs / 7” Reel 3Kpcs / 7” Reel N-Channel MOSFET
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b o o
Symbol
VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C
Limit
40 ±20 3.9 ±16 0.8 1.25 0.8 +150 -55 to +150
Unit
V V A A A W
o o
C C
Thermal Performance
Parameter
Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec.
Symbol
RӨJF RӨJA
Limit
50 100
Unit
o o
C/W C/W
1/6
Version: A10
40V N-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic
b
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TSM2318
Conditions
VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = ±20V, VDS = 0V VDS = 32V, VGS = 0V VDS ≥ 4.5V, VGS = 10V VGS = 10V, ID = 3.9A VGS = 4.5V, ID = 3.5A VDS = 10V, ID = 3.9A IS = 1.25A, VGS = 0V
Symbol
BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off)
Min
40 1 --6 ---------------
Typ
-----36 50 11 0.8 10 1.6 2.1 540 80 45 5 12 20 15
Max
-3 ±100 1.0 -45 62.5 -1.2 --------- ---
Unit
V V nA µA A mΩ S V
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
c
VDS = 20V, ID = 3.9A, VGS = 10V VDS = 20V, VGS = 0V, f = 1.0MHz
nC
pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
VDD = 20V, RL = 20Ω, ID = 1A, VGEN = 10V,
nS
RG = 6Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature.
2/6
Version: A10
40V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics Transfer Characteristics
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TSM2318
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: A10
40V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage Threshold Voltage
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TSM2318
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: A10
40V N-Channel MOSFET
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TSM2318
SOT-23 Mechanical Drawing
DIM A A1 B C D E F G H I J
SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º
Marking Diagram
18 = Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code
5/6
Version: A10
40V N-Channel MOSFET
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TSM2318
Notice
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