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TSM2318 Dataheets PDF



Part Number TSM2318
Manufacturers Taiwan Semiconductor Company
Logo Taiwan Semiconductor Company
Description 40V N-Channel MOSFET
Datasheet TSM2318 DatasheetTSM2318 Datasheet (PDF)

40V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain www.DataSheet4U.com TSM2318 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 40 45 @ VGS = 10V 62.5 @ VGS = 4.5V ID (A) 3.9 3.5 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch Stepper Motors Ordering Information Part No. TSM2318CX RF TSM2318CX RFG Package SOT-23 SOT-23 Packing 3Kpcs / 7” Reel 3Kpcs / 7” Reel N-Channel MOSFET Note: “G” .

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40V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain www.DataSheet4U.com TSM2318 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 40 45 @ VGS = 10V 62.5 @ VGS = 4.5V ID (A) 3.9 3.5 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch Stepper Motors Ordering Information Part No. TSM2318CX RF TSM2318CX RFG Package SOT-23 SOT-23 Packing 3Kpcs / 7” Reel 3Kpcs / 7” Reel N-Channel MOSFET Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit 40 ±20 3.9 ±16 0.8 1.25 0.8 +150 -55 to +150 Unit V V A A A W o o C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. Symbol RӨJF RӨJA Limit 50 100 Unit o o C/W C/W 1/6 Version: A10 40V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic b www.DataSheet4U.com TSM2318 Conditions VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = ±20V, VDS = 0V VDS = 32V, VGS = 0V VDS ≥ 4.5V, VGS = 10V VGS = 10V, ID = 3.9A VGS = 4.5V, ID = 3.5A VDS = 10V, ID = 3.9A IS = 1.25A, VGS = 0V Symbol BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Min 40 1 --6 --------------- Typ -----36 50 11 0.8 10 1.6 2.1 540 80 45 5 12 20 15 Max -3 ±100 1.0 -45 62.5 -1.2 --------- --- Unit V V nA µA A mΩ S V Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = 20V, ID = 3.9A, VGS = 10V VDS = 20V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 20V, RL = 20Ω, ID = 1A, VGEN = 10V, nS RG = 6Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/6 Version: A10 40V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics www.DataSheet4U.com TSM2318 On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: A10 40V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage www.DataSheet4U.com TSM2318 Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 Version: A10 40V N-Channel MOSFET www.DataSheet4U.com TSM2318 SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º Marking Diagram 18 = Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: A10 40V N-Channel MOSFET www.DataSheet4U.com TSM2318 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper .


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