TSM2N7002K

TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain www.DataSheet4U.com PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 60 2 @ VGS = 10V 4 @ VGS = 4.5V ID (mA) 300 200 Features ● ● ● ● Low On-Resistance ESD Protected 2KV High Speed Switching Low Voltage Drive Block Diagram Ordering Information Part No. TSM2N7002KCX RF TSM2N7002KCU RF Package SOT-23 SOT-323 Packing 3Kpcs / 7” Reel 3Kpcs / 7” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous @ TA=25ºC Pulsed Continuous @ TA=25ºC Pulsed Symbol VDS VGS ID IDM IDR IDMR PD TJ TJ, TSTG Limit 60 ±20 300 800 300 800 300 +150 -55 to +150 Unit V V mA Drain Reverse Current Maximum Power Dissipation Operating Junction Temperature mA mW o o C C Operating Junction and Storage Temperature Range Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Symbol TL RӨJA Limit 5 350 Unit S o C/W Notes: a. Pulse width ≤300us, Duty cycle ≤2% b. When the device is mounted on a glass epoxy board with area measuring 1 x 0.75 x 0.62 inch. c. The power dissipation of the package may result in a continuous drain current. 1/7 Version: B09 TSM2N7002K 60V N-Channel MOSFET Electrical Specifications (Ta = 25oC, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Cu...