20V P-Channel MOSFET
20V P-Channel MOSFET
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
42 @ VGS = -4.5V -20 57 @ VGS = -2.5V 80 @ VGS = -1.8V
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Description
20V P-Channel MOSFET
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
42 @ VGS = -4.5V -20 57 @ VGS = -2.5V 80 @ VGS = -1.8V
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TSM3433
SOT-26
Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source
ID (A)
-5.6 -4.8 -1.4
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● ● Load Switch PA Switch
Ordering Information
Part No.
TSM3433CX6 RF
Package
SOT-26
Packing
3Kpcs / 7” Reel P-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b o o
Symbol
VDS VGS ID IDM IS PD TJ TJ, TSTG
Limit
-20 ±8 -5.6 -20 -1.7 2.0 1.0 +150 - 55 to +150
Unit
V V A A A W
o o
Ta = 25 C Ta = 70 C
C C
Thermal Performance
Parameter
Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
Symbol
RӨJC RӨJA
Limit
30 80
Unit
o o
C/W C/W
1/6
Version: A07
20V P-Channel MOSFET
Electrical Specifications (Ta = 25oC, unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage On-State Drain Current Drain-Source On-Stat...
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