TSM3442

TSM3442 Taiwan Semiconductor N-Channel Power MOSFET 20V, 4A, 70mΩ FEATURES ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance APPLICATION ● Load Switch ● PA Switch KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 20 V VGS = 4.5V 70 RDS(on) (max) VGS = 2.5V 90 mΩ Qg 5.4 nC SOT-26 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C Total Power Dissipation @ TC = 25°C Operating Junction and Storage Temperature Range VDS VGS ID IDM PDTOT TJ, TSTG 20 ±8 4 2.4 8 1.25 - 55 to +150 UNIT V V A A W °C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 30 °C/W Junction to Ambient Thermal Resistance RӨJA 80 °C/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air , Document Number: DS_P0000076 1 Version: B15 TSM3442 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN Static (Note 3) Drain-Source Breakdown Voltage VGS ...