20V P-CHANNEL MOSFET
TSM3443
20V P-Channel MOSFET
SOT-26
Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source
PRODUCT SUM...
Description
TSM3443
20V P-Channel MOSFET
SOT-26
Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source
PRODUCT SUMMARY
VDS (V)
RDSON (mΩ)
60 @ VGS = -4.5V -20
100 @ VGS = -2.5V
ID (A)
-4.7
-3.8
Features
● Advance Trench Process Technology ● High Density Cell Design fPor Ultra Low On-resistance
Application
● Load Switch ● PA Switch
Ordering Information
Block Diagram
Part No.
Package
Packing
TSM3443CX6 RF
SOT-26
3Kpcs / 7” Reel
TSM3443CX6 RFG
SOT-26
3Kpcs / 7” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Ratings (TA=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @4.5V.
Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction)a,b
Maximum Power Dissipation
TA=25oC TA=70oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
VDS VGS ID IDM IS
PD
TJ TJ, TSTG
Thermal Performance
Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note 1: Pulse width limited by the Maximum junction temperature Note 2: Surface Mounted on FR4 Board, t ≤ 5 sec
Symbol RӨJC RӨJA
P-Channel MOSFET
Limit -20 ±12 -4.7 -20 -1.7 2 1.3 +150
- 55 to +150
Limit 30 80
Unit V V A A A
W
oC oC
Unit oC/W oC/W
1/6 Version: E14
TSM3443
20V P-Channel MOSFET
Electrical Specifications (TA=25oC unless otherwise noted)
Parameter
Conditions
Symbol
Static Drain-Source Breakdown Voltage Gate Threshold Volt...
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