30V P-Channel MOSFET
TSM3457
30V P-Channel MOSFET
SOT-26
Pin Definition:
1. Drain
6. Drain
2. Drain
5. Drain
3. Gate
4. Source
Key P...
Description
TSM3457
30V P-Channel MOSFET
SOT-26
Pin Definition:
1. Drain
6. Drain
2. Drain
5. Drain
3. Gate
4. Source
Key Parameter Performance
Parameter
Value
VDS
RDS(on) (max)
VGS = -10V VGS = -4.5V
-30 60 100
Qg 9.52
Unit
V mΩ
nC
Features
● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
Ordering Information
Part No.
Package
Packing
TSM3457CX6 RFG
SOT-26
3kpcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds
Block Diagram
P-Channel MOSFET
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current Continuous Source Current (Diode Conduction) (Note 1,2)
Maximum Power Dissipation Operating Junction Temperature
TA =25°C TA=70°C
Operating Junction and Storage Temperature Range
VDS ...
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