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TSM4404

Taiwan Semiconductor Company

30V N-Channel MOSFET

30V N-Channel MOSFET SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain www.DataSheet4U.com ...


Taiwan Semiconductor Company

TSM4404

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Description
30V N-Channel MOSFET SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain www.DataSheet4U.com TSM4404 PRODUCT SUMMARY VDS (V) 30 RDS(on)(mΩ) 30 @ VGS = 10V 33 @ VGS = 4.5V 48 @ VGS = 2.5V ID (A) 8.5 8.5 5 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● ● High-Side DC/DC Conversion Notebook Sever Ordering Information Part No. TSM4404CS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit 30 ±12 8.5 60 4.3 3.0 2.1 +150 - 55 to +150 Unit V V A A A W o o C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec. Symbol RӨJF RӨJA Limit 24 62.5 Unit o o C/W C/W 1/6 Version: A09 30V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State R...




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