TSM4415

Preliminary www.DataSheet4U.com TSM4415 30V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 26 @ VGS = -20V 35 @ VGS = -10V SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5, Drain ID (A) -8.0 -8.0 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram (1,2,3) Application ● ● Load Switch PA Switch (4) Ordering Information Part No. TSM4415CS RL Package SOP-8 Packing 2.5kpcs/13” reel (5,6,7,8) P-Channel MOSFET Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o Symbol VDS VGS ID IDM IS o Limit -30 ±25 -8 -30 -1 Unit V V A A A W o o Ta = 25 C Ta = 70 C PD 3 2.1 +150 - 55 to +150 TJ TJ, TSTG C C Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. Symbol RӨJF RӨJA Limit 30 75 Unit o o C/W C/W 1/1 Version: Preliminary Preliminary Electrical Specifications Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State D...