TSM4420

TSM4420 Pin assignment: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain Preliminary www.DataSheet4U.com N-Channel Enhancement Mode MOSFET VDS = 25V ID = 13.5A RDS (on), Vgs @ 10V, Ids @ 13.5A = 8.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 11A = 11mΩ Features  Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current   Block Diagram Ordering Information Part No. TSM4420CS Packing Package SOP-8 Tape & Reel (2,500pcs / Reel) Absolute Maximum Rating (TA = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range TA = 25 C TA = 70 C o o Symbol VDS VGS ID IDM PD TJ TJ, TSTG Limit 25 ±20 13.5 50 2 1.3 +150 -55 to +150 Unit V V A W o o C C Thermal Performance Parameter Junction-to-case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: 1. Maximum DC current limited by the package 2 2. 1-in 2oz Cu PCB board Symbol Rθjc Rθja Limit 2.2 50 Unit o C/W TSM4420 1-3 2005/08 rev. B www.DataSheet4U.com Electrical Characteristics TJ = 25 C, unless otherwise noted o Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Conditions Symbol Min Typ Max Unit VGS = 0V, I...