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TSM4425 Dataheets PDF



Part Number TSM4425
Manufacturers Taiwan Semiconductor Company
Logo Taiwan Semiconductor Company
Description 30V P-Channel MOSFET
Datasheet TSM4425 DatasheetTSM4425 Datasheet (PDF)

30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain www.DataSheet4U.com TSM4425 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 12 @ VGS = -10V 19 @ VGS = -4.5V ID (A) -11 -8.5 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● ● Load Switches Notebook PCs Desktop PCs Ordering Information Part No. TSM4425CS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel P.

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30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain www.DataSheet4U.com TSM4425 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 12 @ VGS = -10V 19 @ VGS = -4.5V ID (A) -11 -8.5 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● ● Load Switches Notebook PCs Desktop PCs Ordering Information Part No. TSM4425CS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel P-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit -30 ±20 -11 -50 -2.1 2.5 1.6 +150 - 55 to +150 Unit V V A A A W o o C C Thermal Performance Parameter Junction to Foot Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec. Symbol RӨJF RӨJA Limit 18 52.5 Unit o o C/W C/W 1/6 Version: A09 30V P-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a a www.DataSheet4U.com TSM4425 Conditions VGS = 0V, ID = -250uA VDS = VGS, ID = -250µA VGS = ±20V, VDS = 0V VDS = -30V, VGS = 0V VDS = -5V, VGS = -10V VGS = -10V, ID = -11A VGS = -4.5V, ID = -8.5A VDS = -15V, ID = -11A IS = -2.1A, VGS = 0V Symbol BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Min -30 -1 ---50 --------------- Typ -----10 15 23 -64 11 25 3680 930 620 15 13 100 53 Max --3 ±100 -1.0 -12 19 --1.3 ----------- Unit V V nA µA A mΩ S V Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic b a Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = -15V, ID = -11A, VGS = -10V VDS = -8V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = -15V, RL = 15Ω, ID = -1A, VGEN = -10V, nS RG = 6Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/6 Version: A09 30V P-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics www.DataSheet4U.com TSM4425 On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: A09 30V P-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage www.DataSheet4U.com TSM4425 Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 Version: A09 30V P-Channel MOSFET SOP-8 Mechanical Drawing www.DataSheet4U.com TSM4425 DIM A B C D F G K M P R SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27BSC 0.05BSC 0.10 0.25 0.004 0.009 0º 7º 0º 7º 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/6 Version: A09 30V P-Channel MOSFET www.DataSheet4U.com TSM4425 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: A09 .


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