30V P-Channel MOSFET
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TSM4431
30V P-Channel MOSFET
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
-30 40 @ VGS = -10V 70 @ VGS = -4...
Description
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TSM4431
30V P-Channel MOSFET
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
-30 40 @ VGS = -10V 70 @ VGS = -4.5V
SOP-8
Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain
ID (A)
-5.8 -4.5
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● ● DC-DC Conversion Asynchronous Buck Converter P-Channel MOSFET
Ordering Information
Part No.
TSM4431CS RL
Package
SOP-8
Packing
T&R
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b o o
Symbol
VDS VGS ID IDM IS
PD
Limit
-30 ±20 -5.8 -20 -2.3
Unit
V V A A A W
o o
Ta = 25 C Ta = 75 C
2.5 1.6
+150 - 55 to +150
TJ TJ, TSTG
C C
Thermal Performance
Parameter
Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec.
Symbol
RӨJC RӨJA
Limit
30 50
Unit
o o
C/W
C/W
1/6
Version: A07
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TSM4431
30V P-Channel MOSFET
Electrical Specifications
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
a a
Conditions
VGS = 0V,...
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