20V Dual P-Channel MOSFET
TSM4433D
20V Dual P-Channel MOSFET
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
90 @ VGS = -4.5V -20 110 @ VGS = -2.5V 150 @ VGS ...
Description
TSM4433D
20V Dual P-Channel MOSFET
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
90 @ VGS = -4.5V -20 110 @ VGS = -2.5V 150 @ VGS = -1.8V
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SOP-8
Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain
1 1 2 2
ID (A)
-3.9 -3.2 -2.6
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● ● DC-DC Conversion Asynchronous Buck Converter
Ordering Information
Part No.
TSM4433DCS RL
Package
SOP-8
Packing
2.5Kpcs / 13” Reel Dual P-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b o o
Symbol
VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C
Limit
-20 ±8 -3.9 -10 -1.2 2.5 1.3 +150 - 55 to +150
Unit
V V A A A W
o o
C C
Thermal Performance
Parameter
Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec.
Symbol
RӨJF RӨJA
Limit
19 40
Unit
o o
C/W C/W
1/6
Version: A07
TSM4433D
20V Dual P-Channel MOSFET
Electrical Specifications
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate B...
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