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TSM4925D Dataheets PDF



Part Number TSM4925D
Manufacturers Taiwan Semiconductor Company
Logo Taiwan Semiconductor Company
Description 30V Dual P-Channel MOSFET
Datasheet TSM4925D DatasheetTSM4925D Datasheet (PDF)

TSM4925D www.DataSheet4U.com 30V Dual P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 25 @ VGS = -10V 41 @ VGS = -4.5V SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain 1 1 2 2 ID (A) -7.1 -5.5 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● ● Load Switches Notebook PCs Desktop PCs Ordering Information Part No. TSM4925DCS RL Package SOP-8 Packi.

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TSM4925D www.DataSheet4U.com 30V Dual P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 25 @ VGS = -10V 41 @ VGS = -4.5V SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain 1 1 2 2 ID (A) -7.1 -5.5 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● ● Load Switches Notebook PCs Desktop PCs Ordering Information Part No. TSM4925DCS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel Dual P-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit -30 ±20 -7.1 -40 -1.7 2.0 1.3 +150 - 55 to +150 Unit V V A A A W o o C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec. Symbol RӨJC RӨJA Limit 30 50 Unit o o C/W C/W 1/6 Version: A07 TSM4925D www.DataSheet4U.com 30V Dual P-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a a Conditions VGS = 0V, ID = -250uA VDS = VGS, ID = -250µ A VGS = ±20V, VDS = 0V VDS = -30V, VGS = 0V VDS = -5V, VGS = -10V VGS = -10V, ID = -7.1A VGS = -4.5V, ID = -5.5A VDS = -10V, ID = -7.1A IS = -1.7A, VGS = 0V Symbol BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Min -30 -1 ---40 --------------- Typ -----20 33 24 -0.8 33 5.8 8.6 1573 319 211 10 15 110 70 Max --3 ±100 -1.0 -25 41 --1.2 70 --1900 -295 15 25 170 110 Unit V V nA µA A mΩ S V Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic b a Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = -15V, ID = -7.1A, VGS = -10V VDS = -15V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = -15V, RL = 15Ω, ID = -1A, VGEN = -10V, nS R G = 6Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤ 300µ S, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/6 Version: A07 TSM4925D www.DataSheet4U.com 30V Dual P-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: A07 TSM4925D www.DataSheet4U.com 30V Dual P-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 Version: A07 TSM4925D www.DataSheet4U.com 30V Dual P-Channel MOSFET SOP-8 Mechanical Drawing DIM A B C D F G K M P R SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27BSC 0.05BSC 0.10 0.25 0.004 0.009 0º 7º 0º 7º 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019 Marking Diagram Y = Year Code M = Month Code (A=Jan, B =Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/6 Version: A07 TSM4925D www.DataSheet4U.com 30V Dual P-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: A07 .


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