TSM5N50

www.DataSheet4U.com TSM5N50 500V N-Channel Power MOSFET TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 500 RDS(on)(Ω) 1.8 @ VGS =10V ID (A) 2.2 General Description The TSM5N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features ● ● ● ● ● Low gate charge typical @ 13nC Low Crss typical @ 8.5pF Fast Switching 100% avalanche tested Improved dv/dt capability Block Diagram Ordering Information Part No. TSM5N50CZ C0 Package TO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Peak Diode Recovery (Note 2) Single Pulse Drain to Source Avalanche Energy (Note 3) Maximum Power Dissipation @Ta = 25 C Operating Junction and Storage Temperature Range o Symbol VDS VGS ID IDM IS dv/dt EAS PD TJ, TSTG Limit 500 ±30 4.5 18 4.5 4.5 300 85 -55 to +150 Unit V V A A A V/ns mJ W o C Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Amb...