TSM8405P

TSM8405P www.DataSheet4U.com Single P-Channel 1.8V Specified MicroSURFTM MOSFET Lateral Power™ for Load Switching and PA Switch VDS = - 12V RDS (on), Vgs @ - 4.5V, Ids @ - 4.9A = 50mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 4.4A = 70mΩ RDS (on), Vgs @ - 1.8V, Ids @ - 4.0A = 90mΩ D S D S S D G G Patent Pending Description Bump Side View TSM8405P is new low cost, state of the art MicroSURFTM lateral MOSFET process technology in chip scale bondwireless packaging minimizes PCB space and Rds(on) plus provides an ultra low Qg x Rds(on) figure of merit. Features Low profile package: less than 0.8mm height when mounted on PCB Occupies only 2.25mm of PCB area 2 Less than 25% of the area of a SSOT-6 Excellent thermal and electrical capabilities Lead free solder bumps available Block Diagram Ordering Information Part No. TSM8405P Packing Tape & Reel Q’ty 3kpcs / 7” Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation (Steady State) Operating Junction Temperature Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ TJ, TSTG Limit - 12V ±8 - 4.9 - 10 1. 5 +150 - 55 to +150 Unit V V A A W o o C C Thermal Performance Parameter Junction to Ambient Thermal Resistance Junction to Balls Thermal Resistance Symbol Rθja RθjR Limit 85 12 Unit o o C/W C/W TSM8405P 1-1 2003/10 rev. G www.DataSheet4U.com Electrical Characteris...