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M65608E Dataheets PDF



Part Number M65608E
Manufacturers ATMEL Corporation
Logo ATMEL Corporation
Description 5-Volt Very Low Power CMOS SRAM
Datasheet M65608E DatasheetM65608E Datasheet (PDF)

www.DataSheet4U.com Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • – Active: 600 mW (Max) – Standby: 1 µW (Typ) Wide Temperature Range: -55⋅C to +125⋅C 400 Mils Width Packages: FP32 and SB32 TTL Compatible Inputs and Outputs Asynchronous No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2 Tested up to a Total Dose of 30 krads (Si) according to MIL STD 883 Method 1019 QML Q and V with SMD 5962-89598 ESCC with Specification 9301/.

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www.DataSheet4U.com Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • – Active: 600 mW (Max) – Standby: 1 µW (Typ) Wide Temperature Range: -55⋅C to +125⋅C 400 Mils Width Packages: FP32 and SB32 TTL Compatible Inputs and Outputs Asynchronous No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2 Tested up to a Total Dose of 30 krads (Si) according to MIL STD 883 Method 1019 QML Q and V with SMD 5962-89598 ESCC with Specification 9301/047 Description The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits. Utilizing an array of six transistors (6T) memory cells, the M65608E combines an extremely low standby supply current (Typical value = 0.2 µA) with a fast access time at 30 ns over the full military temperature range. The high stability of the 6T cell provides excellent protection against soft errors due to noise. The M65608E is processed according to the methods of the latest revision of the MIL PRF 38535 or ESCC 9000. Rad. Tolerant 128Kx8, 5-Volt Very Low Power CMOS SRAM M65608E www.DataSheet4U.com Block Diagram Pin Configuration 32-lead DIL side-brazed 32-lead Flatpack 400 MILS 400 MILS 2 M65608E 4151N–AERO–04/09 M65608E www.DataSheet4U.com Pin Description Table 1. Pin Names Names A0 - A16 I/O0 - I/O7 CS1 CS2 WE OE VCC GND Description Address inputs Data Input/Output Chip select 1 Chip select 2 Write Enable Output Enable Power Ground Table 2. Truth Table CS1 H CS2 X W X OE X Inputs/ Outputs Z Mode Deselect/ Power-down Deselect/ power-down Read Write Output Disable X L L L Note: L H H H X H L H X L X H Z Data Out Data In Z L = low, H = high, X = H or L, Z = high impedance. 3 4151N–AERO–04/09 w w w . D a t a S h e Electrical Characteristics Absolute Maximum Ratings Supply voltage to GND potential: ........................ -0.5V + 7.0V Voltage range on any input: ............ GND - 0.5V to VCC + 0.5 Voltage range on any ouput: ........... GND - 0.5V to VCC + 0.5 Storage temperature: ..................................... -65⋅C to +150⋅C Output Current from Output Pins: ................................ 20 mA Electrostatic Discharge Voltage: ............................... > 2000V (MIL STD 883D method 3015.3) *NOTE: Stresses beyond those listed under "Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure between recommended DC operating and absolute maximum rating conditions for extended periods may affect device reliability. Military Operating Range Operating Voltage 5V + 10% Operating Temperature -55⋅C to + 125⋅C Recommended DC Operating Conditions Parameter Description Minimum 4.5 0.0 GND - 0.5 2.2 Typical 5.0 0.0 0.0 – Maximum 5.5 0.0 0.8 VCC + 0.5 Unit V V V V VCC GND VIL VIH Capacitance Parameter Supply voltage Ground Input low voltage Input high voltage Description Minimum – – Typical – – Maximum 8 8 Unit pF pF Cin(1) Cout(1) Note: Input low voltage Output high voltage 1. Guaranteed but not tested. 4 M65608E 4151N–AERO–04/09 M65608E www.DataSheet4U.com DC Parameters DC Test Conditions Table 3. DC Test Conditions TA = -55°C to + 125°C; Vss = 0V; VCC = 4.5V to 5.5V Symbol Description Minimum -1 -1 – 2.4 Typical – – – – Maximum 1 1 0.4 – Unit µA µA V V IIX (1) IOZ(1) VOL (2) VOH (3) 1. 2. 3. Input leakage current Output leakage current Output low voltage Output high voltage GND < Vin < VCC, GND < Vout < VCC Output Disabled. VCC min. IOL = 8 mA VCC min. IOH = -4 mA. Consumption Symbol Description 65608E-30 2 300 110 65608E-45 2 300 100 Unit mA µA mA Value max max max ICCSB (1) ICCSB1 (2) ICCOP (3) 1. 2. 3. Standby supply current Standby supply current Dynamic operating current CS1 > VIH or CS2 < VIL and CS1 < VIL. CS1 > VCC - 0.3V or, CS2 < GND + 0.3V and CS1 < 0.2V. F = 1/TAVAV, Iout = 0 mA, W = OE = VIH, Vin = GND or VCC, VCC max. 5 4151N–AERO–04/09 www.DataSheet4U.com AC Parameters AC Test Conditions Input Pulse Levels: ....................................GND to 3.0V Input Rise/Fall Times: ...............................5 ns Input Timing Reference Levels: ................1.5V Output loading IOL/IOH (see Figure 1 and Figure 2)+30 pF AC Test Loads Waveforms Figure 1 Figure 2 Figure 3 Data Retention Mode Atmel CMOS RAM’s are designed with battery backup in mind. Data retention voltage and supply current are guaranteed over temperature. The following rules ensure data retention: 1. During data retention chip select CS1 must be held high within VCC to VCC -0.2V or, chip select CS2 must be held down within GND to GND +0.2V. 2. Output Enable (OE) should be held high to keep the RAM outputs high impedance, minimizing power dissipation. 3. During power up and power-down transitions CS1 and OE must be kept between VCC + 0.3V and 70% of VCC, or with CS2 betwee.


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