20V Dual N-Channel MOSFET w/ESD Protected
TSM6968D
Pin assignment: 1. Drain 2. Source 1 3. Source 1 4. Gate 1 5, Gate 2 6. Source 2 7, Source 2 8. Drain
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Description
TSM6968D
Pin assignment: 1. Drain 2. Source 1 3. Source 1 4. Gate 1 5, Gate 2 6. Source 2 7, Source 2 8. Drain
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20V Dual N-Channel MOSFET w/ESD Protected
VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6.5A =22mΩ RDS (on), Vgs @ 2.5V, Ids @ 5.5A =29mΩ
Features
Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application
Block Diagram
Ordering Information
Part No. TSM6968DCA Packing Tape & Reel 3,000/per reel Package TSSOP-8
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Maximum Power Dissipation Ta = 25 C Ta = 70 C Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG
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Symbol
VDS VGS ID IDM PD
Limit
20V ± 12 6.5 30 1.5 0.96 +150 - 55 to +150
Unit
V V A A W
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C C
Thermal Performance
Parameter
Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=10sec.
Symbol
Rθjf Rθja
Limit
35 83
Unit
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C/W C/W
TSM6968D
1-5
2003/12 rev. A
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Electrical Characteristics
Rate ID = 6.5A, (Ta = 25 C unless otherwise noted)
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Parameter Static
Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Th...
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