TSM6968SD

TSM6968SD Pin assignment: 1. Drain 1 2. Source 1 3. Source 1 4. Gate 1 5, Gate 2 6. Source 2 7, Source 2 8. Drain 2 www.DataSheet4U.com 20V Dual N-Channel MOSFET w/ESD Protected VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6.5A =25mΩ RDS (on), Vgs @ 2.5V, Ids @ 5.5A =35mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application Block Diagram Ordering Information Part No. TSM6968SDCA Packing Tape & Reel 3,000/per reel Package TSSOP-8 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Maximum Power Dissipation Ta = 25 oC Ta = 70 oC Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG Symbol VDS VGS ID IDM PD Limit 20V ± 12 6.5 30 1.5 0.96 +150 - 55 to +150 Unit V V A A W o o C C Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=10sec. Symbol Rθjf Rθja Limit 35 83 Unit o o C/W C/W TSM6968SD 1-5 2005/04 rev. A www.DataSheet4U.com Electrical Characteristics Rate ID = 6.5A, (Ta = 25 oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshol...