20V Dual N-Channel MOSFET w/ESD Protected
TSM6988D
20V Dual N-Channel MOSFET w/ESD Protected
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
20 35 @ VGS = 4.5V 40 @ VGS = 2.5...
Description
TSM6988D
20V Dual N-Channel MOSFET w/ESD Protected
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
20 35 @ VGS = 4.5V 40 @ VGS = 2.5V
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SOT-26
Pin Definition: 1. Gate 2 6. Source 2 2. Drain 5, Drain 3. Gate 1 4. Source 1
ID (A)
6.0 5.0
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Dual N-Channel MOSFET
Application
● ● Specially Designed for Li-on Battery Packs Battery Switch Application
Ordering Information
Part No.
TSM6988DCX6 RF
Package
SOT-26
Packing
3Kpcs / 7” Reel
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b o o
Symbol
VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C
Limit
20 ±12 6 30 1.4 1.25 0.8 +150 -55 to +150
Unit
V V A A A W
o o
C C
Thermal Performance
Parameter
Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec.
Symbol
RӨJF RӨJA
Limit
30 50
Unit
o o
C/W C/W
1/6
Version: B07
TSM6988D
20V Dual N-Channel MOSFET w/ESD Protected
Electrical Specifications
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Le...
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