TSM6981D

TSM6981D 20V Dual P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 40 @ VGS = -4.5V -20 50 @ VGS = -2.5V 60 @ VGS = -1.8V www.DataSheet4U.com TSSOP-8 Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 ID (A) -5 -4 -3 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. TSM6981DCA RF Package TSSOP-8 Packing T&R Dual P-Channel MOSFET Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD Limit -20 ±8 -5 -30 -1.0 Unit V V A A A W o o Ta = 25 C Ta = 70 C 1.14 0.73 +150 - 55 to +150 TJ TJ, TSTG C C Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol RӨJF RӨJA Limit 40 75 Unit o o C/W C/W 1/6 Version: A07 TSM6981D 20V Dual P-Channel MOSFET Electrical Specifications Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage O...