SSF1016

www.DataSheet4U.com SSF1016 Feathers: „ „ „ Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =75A BV=100V Rdson=16mΩ(Max.） Description: The SSF1016 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1016 is assembled in high reliability and qualified assembly house. Application: „ Power switching application SSF1016 TOP View (T0-220) Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS EAR dv/dt TJ TSTG Thermal Resistance Parameter RθJC RθJA Junction-to-case Junction-to-ambient Min. — — Typ. 0.55 — Max. — 62 Units ْC/W Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source voltage Single pulse avalanche energy ② Repetitive avalanche energy Peak diode recovery voltage Operating Junction and Storage Temperature Range Max. 75 65 300 227 1.5 ±20 380 TBD 31 –55 to +150 W W/ ْC V mJ mJ v/ns ْC A Units Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS VGS(th) IDSS Drain-to-Source breakdown voltage Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Gate-to-Source reverse leakage RDS(on) Static Drain-to-Source on-resistance Min. 100 — 2.0 — — — — 2009.8.10 Typ. — 11 — — — — — Max. Units —...