SSF1020

SSF1020 Feathers: „ „ „ „ Advanced trench process technology Ultra low Rdson, typical 16mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60A BV=100V Rdson=20mΩ（max.） www.DataSheet4U.com Description: The SSF1020 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1020 is assembled in high reliability and qualified assembly house. Application: „ Power switching application SSF1020 TOP View (TO220) Absolute Maximum Ratings Parameter ID@Tc=25 ْC IDM Continuous drain current,VGS@10V Pulsed drain current ① Linear derating factor VGS EAS EAR TJ TSTG Gate-to-Source voltage Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction and Storage Temperature Range Parameter RθJC RθJA Junction-to-case Junction-to-ambient Min. — — ID@Tc=100ْC Continuous drain current,VGS@10V PD@TC=25ْC Power dissipation Max. 60 50 240 150 2.0 ±20 240 TBD –55 to +150 ْC W W/ ْC V mJ A Units Thermal Resistance Typ. 0.83 — Max. — 62 Units ْC/W Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Forward transconductance Drain-to-Source leakage current Gate-to-Source forward leakage 2009.12.13 Min. 100 — 2.0 — — — Typ. — 16 3.0 58 — — — Max. Units...