Document
SSF2300B
www.DataSheet4U.com
DESCRIPTION
The SSF2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
D
G
S Schematic diagram
GENERAL FEATURES
● VDS = 20V,ID = 4.5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 40mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Marking and pin Assignment
Application
●Battery protection ●Load switch ●Power management SOT23-3 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking 2300B Device SSF2300B Device Package SOT23-3 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range
Limit
20 ±10 4.5 16 1.2 -55 To 150
Unit
V V A A W ℃
VDS VGS ID IDM PD TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 140 ℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA
Min
20
Typ
Max
Unit
V
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v1.0
SSF2300B
www.DataSheet4U.com
Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3)
IDSS IGSS
VDS=20V,VGS=0V VGS=±10V,VDS=0V
1 ±100
μA nA
VGS(th) RDS(ON) gFS
VDS=VGS,ID=250μA VGS=2.5V, ID=4A VGS=4.5V, ID=4.5A VDS=10V,ID=4.5A
0.5
0.7 35 28 8
1.5 50 40
V mΩ mΩ S
Clss Coss Crss VDS=10V,VGS=0V, F=1.0MHz
500 250 90
PF PF PF
td(on) tr td(off) tf Qg Qgs Qgd VDS=10V,ID=4.2A,VGS=4.5V VDD=10V, RL = 2.8 Ω VGS=4.5V,RGEN=6Ω, ID=3.6A,
7 55 16 10 10 2.3 2.9
nS nS nS nS nC nC nC
VSD
VGS=0V,IS=1.3A
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
2
http://www.silikron.com
v1.0
SSF2300B
www.DataSheet4U.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
td(on) ton tr
90%
td(off)
toff tf
90%
Vin Vgs Rgen G
Rl D Vout
VOUT
10%
INVERTED
10% 90%
S
VIN
10%
50%
50%
PULSE WIDTH
Figure 1: Switching Test Circuit Normalized Effective Transient Thermal Impedance
Figure 2:Switching Wave.