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SSF2300B Dataheets PDF



Part Number SSF2300B
Manufacturers Silikron Semiconductor Co
Logo Silikron Semiconductor Co
Description Battery protection
Datasheet SSF2300B DatasheetSSF2300B Datasheet (PDF)

SSF2300B www.DataSheet4U.com DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. D G S Schematic diagram GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 40mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking.

  SSF2300B   SSF2300B



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SSF2300B www.DataSheet4U.com DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. D G S Schematic diagram GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 40mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOT23-3 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 2300B Device SSF2300B Device Package SOT23-3 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit 20 ±10 4.5 16 1.2 -55 To 150 Unit V V A A W ℃ VDS VGS ID IDM PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 140 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Min 20 Typ Max Unit V ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.0 SSF2300B www.DataSheet4U.com Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) IDSS IGSS VDS=20V,VGS=0V VGS=±10V,VDS=0V 1 ±100 μA nA VGS(th) RDS(ON) gFS VDS=VGS,ID=250μA VGS=2.5V, ID=4A VGS=4.5V, ID=4.5A VDS=10V,ID=4.5A 0.5 0.7 35 28 8 1.5 50 40 V mΩ mΩ S Clss Coss Crss VDS=10V,VGS=0V, F=1.0MHz 500 250 90 PF PF PF td(on) tr td(off) tf Qg Qgs Qgd VDS=10V,ID=4.2A,VGS=4.5V VDD=10V, RL = 2.8 Ω VGS=4.5V,RGEN=6Ω, ID=3.6A, 7 55 16 10 10 2.3 2.9 nS nS nS nS nC nC nC VSD VGS=0V,IS=1.3A 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. ©Silikron Semiconductor CO.,LTD. 2 http://www.silikron.com v1.0 SSF2300B www.DataSheet4U.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd td(on) ton tr 90% td(off) toff tf 90% Vin Vgs Rgen G Rl D Vout VOUT 10% INVERTED 10% 90% S VIN 10% 50% 50% PULSE WIDTH Figure 1: Switching Test Circuit Normalized Effective Transient Thermal Impedance Figure 2:Switching Wave.


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