SSF2301

www.DataSheet4U.com SSF2301 DESCRIPTION The SSF2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G S GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 115mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT23 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 2301 SSF2301 SOT23 Ø180mm Tape width 8 mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit -20 ±12 -3 -10 1.25 -55 To 150 Unit V V A A W ℃ VDS VGS ID IDM PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 100 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current BVDSS IDSS IGSS VGS=0V ID=-250μA VDS=-20V,VGS=0V VGS=±12V,VDS=0V Min -20 Typ Max Unit V -1 ±100 μA nA ©Silikron Semiconductor CO.,LTD. 1 http://www.silik...