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SSF3420

Silikron Semiconductor Co

PWM applications

SSF3420 www.DataSheet4U.com DESCRIPTION The SSF3420 uses advanced trench technology to provide excellent RDS(ON) and lo...


Silikron Semiconductor Co

SSF3420

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Description
SSF3420 www.DataSheet4U.com DESCRIPTION The SSF3420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. D G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =6.3A RDS(ON) < 33mΩ @ VGS=4.5V RDS(ON) < 25mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT23-6 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 3420 Device SSF3420 Device Package SOT23-6 Reel Size Ø180mm Tape width 8mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Limit 30 ±20 6.3 4.8 20 1.6 -55 To 150 Unit V V A A W ℃ VDS VGS ID(25℃) ID(70℃) Drain Current-Continuous@ Current-Pulsed (Note 1) IDM Maximum Power Dissipation Operating Junction and Storage Temperature Range PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 78 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Min 30 Typ Max Unit V ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.0 SSF3420 www.DataSheet4U.com Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) IDSS IGSS VDS=24V,V...




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