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SSF3626

Silikron Semiconductor Co

PWM applications

SSF3626 www.DataSheet4U.com DESCRIPTION The SSF3626 uses advanced trench technology to provide excellent RDS(ON) and lo...


Silikron Semiconductor Co

SSF3626

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Description
SSF3626 www.DataSheet4U.com DESCRIPTION The SSF3626 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =6.9A RDS(ON) < 51mΩ @ VGS=4.5V RDS(ON) < 35mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking SSF3626 Device SSF3626 Device Package SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit 30 ±20 6.9 30 2.8 -55 To 150 Unit V V A A W ℃ VDS VGS ID IDM PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 62.5 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=250μA VDS=30V,VGS=0V Min 30 Typ Max Unit V 1 μA ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.0 SSF3626 www.DataSheet4U.com Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltag...




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