SSF5508

SSF5508 Feathers: „ „ „ „ Advanced trench process technology Ultra low Rdson, typical 6mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current ID =110A BV=55V Rdson=4.5 mΩ(typ.) www.DataSheet4U.com Description: The SSF5508 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF5508 is assembled in high reliability and qualified assembly house. Application: „ Power switching application SSF5508 TOP View (TO220) Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC IDM PD@TC=25ْC VGS dv/dt EAS EAR TJ TSTG Thermal Resistance Parameter RθJC RθJA Junction-to-case Junction-to-ambient Parameter BVDSS RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Forward transconductance Drain-to-Source leakage current Gate-to-Source forward leakage 2009.12.26 Max. 110 80 400 170 2.0 ±20 31 480 TBD –55 to +150 Units A W W/ ْC V v/ns mJ Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source voltage Peak diode recovery voltage Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction and Storage Temperature Range Min. — — Min. 55 — 2.0 — — — 58 — — — Typ. — 4.5 ْC Typ. 0.73 — Max. — 62 Units ْC/W Electrical Characteristics @TJ=2...