SSF6401

www.DataSheet4U.com SSF6401 DESCRIPTION The SSF6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G D S Schematic diagram GENERAL FEATURES ● VDS = -12V,ID = -4.3A RDS(ON) < 85mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT-23 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 6401 Device SSF6401 Device Package SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit -12 ±8 -4.3 -34 1.3 -55 To 150 Unit V V A A W ℃ VDS VGS ID IDM PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 100 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current BVDSS IDSS IGSS VGS=0V ID=-250μA VDS=-12V,VGS=0V VGS=±8V,VDS=0V Min -12 Typ Max Unit V -1 ±100 μA nA ©Silikron Semiconductor CO.,LTD. 1 http://www.silik...