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SSF6670
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DESCRIPTION
The SSF6670 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
Schematic diagram
GENERAL FEATURES
● VDS = 60V,ID =3.5A RDS(ON) <120mΩ @ VGS=4.5V RDS(ON) <90mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications ●Load switch ●Power management
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking SSF6670 Device SSF6670 Device Package SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol
Drain-Source Voltage Gate-Source Voltage
Limit
60 ±25 3.5 2.8 20 2.0 -55 To 150
Unit
V V A A A W ℃
VDS VGS ID(25℃) ID(70℃) IDM PD TJ,TSTG
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 62.5 ℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA
Min
60
Typ
Max
Unit
V
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Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3)
IDSS IGSS
VDS=60V,VGS=0V VGS=±25V,VDS=0V
10 ±100
μA nA
VGS(th) RDS(ON) gFS
VDS=VGS,ID=250μA VGS=4.5V, ID=2A VGS=10V, ID=3A VDS=10V,ID=3A
1 80 65 3
3 120 90
V mΩ mΩ S
Clss Coss Crss VDS=25V,VGS=0V, F=1.0MHz
500 50 40
PF PF PF
td(on) tr td(off) tf Qg Qgs Qgd Trr Qrr IF=4A, dI/dt=100A/µs VDS=48V,ID=3A,VGS=4.5V VDS=30V,VGS=10V,RGEN=3Ω ID=1A
6 5 16 3 7 2 3 27 32
nS nS nS nS nC nC nC nS nC
VSD
VGS=0V,IS=1.7A
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton tr
90%
Vdd Rl D G Vout
td(on)
td(off)
toff tf
90%
Vin Vgs Rgen
VOUT
10%
INVERTED
10% 90%
VIN
S
10%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
TJ-Junction Temperature(℃)
ID- Drain Current (A)
PD Power(W)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
Rdson On-Resistance(Ω)
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
ID- Drain Current (A)
Figure 5 Output CHARACTERISTICS
Figure 6 Drain-Source On-Resistance
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Vgs Gate-Source Voltage (V)
Normalized On-Resistance
ID- Drain Current (A)
TJ-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Rdson On-Resistance(Ω)
Vgs Gate-Source Voltage (V)
C Capacitance (pF)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (A)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
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SSF6670
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ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 13
Safe Operation Area
r(t),Normalized Effective Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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SOP-8 PACKAGE INFORMATION
NOTES:
1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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ATTENTION: ■
Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical an.