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SSF6670 Dataheets PDF



Part Number SSF6670
Manufacturers Silikron Semiconductor Co
Logo Silikron Semiconductor Co
Description PWM applications
Datasheet SSF6670 DatasheetSSF6670 Datasheet (PDF)

SSF6670 www.DataSheet4U.com DESCRIPTION The SSF6670 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . Schematic diagram GENERAL FEATURES ● VDS = 60V,ID =3.5A RDS(ON) <120mΩ @ VGS=4.5V RDS(ON) <90mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device M.

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SSF6670 www.DataSheet4U.com DESCRIPTION The SSF6670 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . Schematic diagram GENERAL FEATURES ● VDS = 60V,ID =3.5A RDS(ON) <120mΩ @ VGS=4.5V RDS(ON) <90mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking SSF6670 Device SSF6670 Device Package SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Limit 60 ±25 3.5 2.8 20 2.0 -55 To 150 Unit V V A A A W ℃ VDS VGS ID(25℃) ID(70℃) IDM PD TJ,TSTG Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 62.5 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Min 60 Typ Max Unit V ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.0 SSF6670 www.DataSheet4U.com Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) IDSS IGSS VDS=60V,VGS=0V VGS=±25V,VDS=0V 10 ±100 μA nA VGS(th) RDS(ON) gFS VDS=VGS,ID=250μA VGS=4.5V, ID=2A VGS=10V, ID=3A VDS=10V,ID=3A 1 80 65 3 3 120 90 V mΩ mΩ S Clss Coss Crss VDS=25V,VGS=0V, F=1.0MHz 500 50 40 PF PF PF td(on) tr td(off) tf Qg Qgs Qgd Trr Qrr IF=4A, dI/dt=100A/µs VDS=48V,ID=3A,VGS=4.5V VDS=30V,VGS=10V,RGEN=3Ω ID=1A 6 5 16 3 7 2 3 27 32 nS nS nS nS nC nC nC nS nC VSD VGS=0V,IS=1.7A 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. ©Silikron Semiconductor CO.,LTD. 2 http://www.silikron.com v1.0 SSF6670 www.DataSheet4U.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr 90% Vdd Rl D G Vout td(on) td(off) toff tf 90% Vin Vgs Rgen VOUT 10% INVERTED 10% 90% VIN S 10% 50% 50% PULSE WIDTH Figure 1:Switching Test Circuit Figure 2:Switching Waveforms TJ-Junction Temperature(℃) ID- Drain Current (A) PD Power(W) TJ-Junction Temperature(℃) Figure 3 Power Dissipation Figure 4 Drain Current Rdson On-Resistance(Ω) ID- Drain Current (A) Vds Drain-Source Voltage (V) ID- Drain Current (A) Figure 5 Output CHARACTERISTICS Figure 6 Drain-Source On-Resistance ©Silikron Semiconductor CO.,LTD. 3 http://www.silikron.com v1.0 SSF6670 www.DataSheet4U.com Vgs Gate-Source Voltage (V) Normalized On-Resistance ID- Drain Current (A) TJ-Junction Temperature(℃) Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance Rdson On-Resistance(Ω) Vgs Gate-Source Voltage (V) C Capacitance (pF) Vds Drain-Source Voltage (V) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward 4 ©Silikron Semiconductor CO.,LTD. http://www.silikron.com v1.0 SSF6670 www.DataSheet4U.com ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 13 Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance ©Silikron Semiconductor CO.,LTD. 5 http://www.silikron.com v1.0 SSF6670 www.DataSheet4U.com SOP-8 PACKAGE INFORMATION NOTES: 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD. 6 http://www.silikron.com v1.0 SSF6670 www.DataSheet4U.com ATTENTION: ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical an.


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