TIP31CE3

CYStech Electronics Corp. 3A NPN Epitaxial Planar Power Transistor www.DataSheet4U.com Issued Date : 2003.09.04 Revised Date : Page No. : 1/4 Spec. No. : C609E3 TIP31CE3 Description TIP31CE3 is designed for use in general purpose amplifier and switching applications. Low collector-emitter saturation voltage, VCE(sat) = 1.2V(max) @ IC = 3A High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min) High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA Features Symbol TIP31CE3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380µs, Duty≦2%. Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg Limits 100 100 5 3 5 (Note 1) 1 2 40 62.5 3.125 150 -55~+150 Unit V V V A A W °C/W °C/W °C °C TIP31CE3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol *BVCEO(SUS) ICEO ICES IEBO *VCE(sat) *VBE(on) *hFE *hFE fT Min. 100 25 10 3 Typ. Max. 300 200 1 1.2 1.8 50 Unit V µA µA mA V V MHz www.DataSheet4U.com Issued Date : 2003.09.04 Revised Date : Page No. : 2/4 Spec. No. : C609E3 Test Conditions IC=30mA, IB=0 VCE=60V, IB=0 VCE=100V, VBE=0 VEB...