HE8404SG

www.DataSheet4U.com HE8404SG GaAlAs Infrared Emitting Diode ODE-208-997B (Z) Rev.2 Mar. 2005 Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features High efficiency and high output power Package Type HE8404SG: SG1 Internal Circuit 1 2 www.DataSheet4U.com HE8404SG Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3 –20 to +60 –40 to +90 Unit mA V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Symbol PO λp ∆λ VF IR Ct tr tf Min 40 790 — — — — — — Typ — 820 50 — — 30 10 10 Max — 850 60 2.5 100 — — — Unit mW nm nm V µA pF ns ns Test Conditions IF = 200 mA IF = 200 mA IF = 200 mA IF = 200 mA VR = 3 V VR = 0 V, f = 1 MHz IF = 50 mA IF = 50 mA Rev.2, Mar. 2005, page 2 of 6 www.DataSheet4U.com HE8404SG Typical Characteristic Curves Optical Output Power vs. Forward Current 60 Optical output power, PO (mW) Forward current, IF (mA) Forward Current vs. Forward Voltage 250 200 150 TC = −20°C 100 50 0 25°C 60°C 50 40 30 20 10 0 0 50 100 150 200 250 Forward current, IF (mA) TC = −20°C 0°C 25°C 40°C 60°C 0 0.5 1.0 1.5 2.0 2.5 Forward voltage, VF (V) Wavelength Distribution Relative radiat...