ATP302

Ordering number : ENA1654 ATP302 www.DataSheet4U.com SANYO Semiconductors DATA SHEET ATP302 Features P-Channel Silicon MOSFET General-Purpose Switching Device Applications Avalanche resistance guarantee. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --60 ±20 --70 --280 70 150 --55 to +150 197 --42 Unit V V A A W °C °C mJ A Note : *1 VDD=--36V, L=100μH, IAV=--42A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | Conditions -1mA, VGS=0V ID=-60V, VGS=0V VDS=VGS=±16V, VDS=0V -10V, ID=-1mA VDS=-10V, ID=--35A VDS=--1.2 75 Ratings min --60 --10 ±10 --2.6 typ max Unit V μA μA V S Marking : ATP302 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shal...