BC817N3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor www.DataSheet4U.com Issued Date : 2003.05.12 Revised Date : Page No. : 1/4 Spec. No. : C906N3 BC817N3 Description The BC817N3 is designed for general purpose switching and amplification applications. Complementary to BC807N3. Features High current (max. 500mA) Low voltage (max 45V). Symbol BC817N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits 50 45 5 500 1 225 150 -55~+150 Unit V V V mA A mW °C °C BC817N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. 50 45 5 100 40 100 Typ. 5 Max. 100 100 700 1.2 600 Unit V V V nA nA mV V www.DataSheet4U.com Issued Date : 2003.05.12 Revised Date : Page No. : 2/4 Spec. No. : C906N3 Test Conditions IC=10µA IC=1mA IE=10µA VCE=20V VEB=5V IC=500mA, IB=50mA VCE=1V, IC=500mA VCE=1V, IC=100mA VCE=1V, IC=500mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% MHz pF Classification of hFE 1: Rank Range 16 100--250 25 160--400 40 250--600 BC817N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain ...