BTA1640J3

CYStech Electronics Corp. PNP Epitaxial Planar Power Transistor Spec. No. : C657J3 www.DataSheet4U.com Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 1/6 BTA1640J3 Features BVCEO IC RCESAT -50V -7A 70mΩ Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.15A Excellent current gain linearity RoHS compliant package Symbol BTA1640J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380μs, Duty≦2%. Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits -30 -30 -5 -7 -10 (Note 1) 1 20 125 6.25 150 -55~+150 Unit V V V A W °C/W °C/W °C °C BTA1640J3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol *BVCEO BVCBO BVEBO ICEO ICBO IEBO *VCE(sat) *VBE(sat) *hFE *hFE Min. -30 -30 -5 160 30 Typ. -0.2 Max. -50 -1 -1 -0.4 -1.2 400 Unit V V V μA μA μA V V - Spec. No. : C657J3 www.DataSheet4U.com Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 2/6 Test Conditions IC=-10mA, IB=0 IC=-1mA, IE=0 IE=-1mA, IC=0 VCE=-20V, IB=0 VCB=-30V, IB=0 VEB=-5V, IC=0 IC=-3A, IB=-150mA IC=-3A, IB=-150mA VCE=-1V, IC=-1A VCE=-1V, IC=-3A ...