BTA1952E3

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C601E3-A Issued Date : 2004.09.16 Revised Date : Page No. : 1/4 BTA1952E3 Features Low VCE(sat), VCE(sat)=-0.5 V (typical), at IC / IB = -3A / -0.15A Excellent DC current gain characteristics Wide SOA Symbol BTA1952E3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw=10ms Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) IB Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits -100 -80 -5 -5 -8 -1 2 40 150 -55~+150 Unit V V V *1 A A W °C °C BTA1952E3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCEO ICBO IEBO *VCE(sat) *VCE(sat) *VCE(sat) *VBE(sat) *hFE 1 *hFE 2 fT Min. -80 100 120 10 Typ. Max. -10 -10 -0.6 -0.8 -1.3 -1.5 390 Unit V µA µA V V V V MHz www.DataSheet4U.com Spec. No. : C601E3-A Issued Date : 2004.09.16 Revised Date : Page No. : 2/4 Test Conditions IC=-10mA, IB=0 VCB=-100V, IE=0 VEB=-5V, IC=0 IC=-1A, IB=-10mA IC=-3A, IB=-150mA IC=-4A, IB=-200mA IC=-3A, IB=-150mA VCE=-3V, IC=-500mA VCE=-2V, IC=-1A VCE=-4V, IC=-1A, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification of hFE 2 Rank Range Q 120~270 R 180~390 Ordering Information Device BTA1952E3 Package TO-220AB Shipping Tube BTA1952E3 C...