BTA1952J3

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C601J3 Issued Date : 2004.05.17 Revised Date :2009.02.04 Page No. : 1/6 BTA1952J3 Features Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A Excellent DC current gain characteristics Wide SOA Complementary to BTC5103J3 RoHS compliant package BVCEO IC RCESAT -100V -5A 150mΩ Symbol BTA1952J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw=10ms BTA1952J3 Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits -100 -80 -5 -5 -10 1 10 150 -55~+150 Unit V V V *1 A W °C °C CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE 1 *hFE 2 fT Min. -100 -80 -5 100 120 Typ. -0.3 120 Max. -10 -10 -1.0 -1.5 390 Unit V V V μA μA V V MHz www.DataSheet4U.com Spec. No. : C601J3 Issued Date : 2004.05.17 Revised Date :2009.02.04 Page No. : 2/6 Test Conditions IC=-50μA, IE=0 IC=-1mA, IB=0 IE=-50μA, IC=0 VCB=-100V, IE=0 VEB=-5V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-3V, IC=-0.5A VCE=-2V, IC=-1A VCE=-5V, IC=-500mA, f=30MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification of hFE 2 Rank Range Q 120~270 R 180~390 Orderi...